document number: 89141 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 13-may-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 high current density surface mount schottky barrier rectifier ss12p4c vishay general semiconductor new product typical applications for use in low voltage high frequency inverters, freewheeling, dc/dc converters and polarity protection applications. features ? very low profile - typical height of 1.1 mm ? ideal for automated placement ? low forward voltage drop, low power losses ? high efficiency ? low thermal impedance ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to iec 61249-2-21 definition mechanical data case: to-277a (smpc) molding compound meets ul 94 v-0 flammability rating base p/n-m3 - halogen-free, rohs compliant, and commercial grade base p/nhm3 - halogen-free, rohs compliant, and automotive grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 m3 suffix meets jesd 201 clas s 1a whisker test, hm3 suffix meets jesd 201 class 2 whisker test notes (1) mounted on 30 mm x 30 mm al pcb with 50 mm x 25 mm x 100 mm fin heat sink (2) free air, mounted on recommended copper pad area primary characteristics i f(av) 2 x 6.0 a v rrm 40 v i fsm 150 a e as 20 mj v f at i f = 6.0 a 0.40 v t j max. 125 c to-277a (smpc) k 2 1 anode 1 anode 2 cathode k esmp tm series maximum ratings (t a = 25 c unless otherwise noted) parameter symbol ss12p4c unit device marking code s124c maximum repetitive peak reverse voltage v rrm 40 v maximum average forward rectified current (fig. 1) (1) total device i f(av) 12 a per diode 6.0 maximum average forward rectified current (2) total device i f(av) 3.5 a peak forward surge current 10 ms single half sine-wave superimposed on rated load per diode i fsm 150 a non-repetitive avalanche energy at t j = 25 c, l = 60 mh per diode e as 20 mj peak repetitive reverse current at t p = 2 s, 1 khz, at t j = 25 c per diode i rrm 1.0 a operating junction and storage temperature range t j, t stg - 55 to + 125 c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 89141 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 13-may-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ss12p4c vishay general semiconductor new product notes (3) pulse test: 300 s pulse width, 1 % duty cycle (4) pulse test: pulse width ? 40 ms notes (1) free air, mounted on recommended copper pad area. thermal resistance r ? ja - junction to ambient. (2) mounted on 30 mm x 30 mm al pcb with 50 mm x 25 mm x 100 mm fin heat sink. thermal resistance r ? jm - junction to mount. note (1) automotive grade ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - maximum forward current derating curve notes ? mounted on 30 mm x 30 mm al pcb with 50 mm x 25 mm x 100 mm fin heat sink, t m measured at the terminal of cathode band (r ? jm = 3 c/w) ? free air, mounted on recommended copper pad area (r ? ja = 100 c/w) electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit instantaneous forward voltage per diode i f = 1 a t a = 25 c v f (1) 0.34 - v i f = 3 a 0.40 - i f = 6 a 0.46 0.52 i f = 1 a t a = 100 c 0.24 - i f = 3 a 0.31 - i f = 6 a 0.40 0.45 reverse current per diode rated v r t a = 25 c i r (2) 129 500 a t a = 100 c 11.9 25 ma typical junction capacitance per diode 4.0 v, 1 mhz c j 400 - pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol ss12p4c unit typical thermal resistance r ? ja (1) 100 c/w r ? jm (2) 3 ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode ss12p4c-m3/86a 0.10 86a 1500 7" diameter plastic tape and reel ss12p4c-m3/87a 0.10 87a 6500 13" diameter plastic tape and reel ss12p4chm3/86a (1) 0.10 86a 1500 7" diameter plastic tape and reel ss12p4chm3/87a (1) 0.10 87a 6500 13" diameter plastic tape and reel 10 12 14 8 6 4 2 0 0 25 50 75 125 150 dc fo r w ard c u rrent (a) am b ient temperat u re (c) 100 t m = 100 c (1) t a = 25 c (2)
document number: 89141 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 13-may-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ss12p4c vishay general semiconductor new product fig. 2 - forward power loss characteristics per diode fig. 3 - typical instantaneous forward characteristics per diode fig. 4 - typical reverse leakage characteristics per diode fig. 5 - typical junc tion capacitance per diode fig. 6 - typical transient ithermal mpedance per diode d = 0.5 a v erage for w ard c u rrent (a) a v erage po w er loss ( w ) 0 1 2 3 4 5 6 7 3.0 2. 8 2.6 2.4 2.2 2.0 1. 8 1.6 1.4 1.2 1.0 0. 8 0.6 0.4 0.2 0 d = t p /t t p t d = 1.0 d = 0. 8 d = 0.1 d = 0.2 d = 0.3 0.1 1 10 100 instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0. 8 0.9 t a = 25 c t a = 125 c t a = 100 c 0.01 1 10 100 10 20 30 40 50 60 70 8 0 90 100 percent of rated peak re v erse v oltage ( % ) instantaneo u s re v erse c u rrent (ma) 0.1 t a = 125 c t a = 100 c t a = 25 c 100 1000 10 000 0.1 1 10 100 re v erse v oltage ( v ) j u nction capaci tance (pf) 10 t j = 25 c f = 1.0 mhz v sig = 50 m v p-p 100 1000 10 000 0.1 1 10 100 re v erse v oltage ( v ) j u nction capacitance (pf) 10 t j = 25 c f = 1.0 mhz v sig = 50 m v p-p
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 89141 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 13-may-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ss12p4c vishay general semiconductor new product package outline dimensions in inches (millimeters) conform to jedec to-277a to-277a ( s mpc) 0.016 (0.40) 0.006 (0.15) 0.047 (1.20) 0.039 (1.00) 0.146 (3.70) 0.134 (3.40) 0.087 (2.20) 0.075 (1.90) 0.189 (4.80) 0.173 (4.40) 0.049 (1.24) 0.037 (0.94) 0.053 (1.35) 0.041 (1.05) 0.030 (0.75) nom. 0.084 (2.13) nom. 0.155 (3.94) nom. mountin g pad layout 0.268 (6.80) 0.186 (4.72) min. 0.050 (1.27) min. 0.041 (1.04) 0.055 (1.40) min. 0.189 (4.80) min. 0.187 (4.75) 0.175 (4.45) 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 0.171 (4.35) 0.167 (4.25) k 2 1
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